Oxford Ionfab System 300+ Ion Mill

photo: ionfab

For questions concerning this machines capabilities, please contact Shaloma Malveaux, at 578-9343.

Removal of metallic patterns from a surface can be performed evenly with this inert gas ion beam system, which uses a projected Ar ion beam to sputter etch the surface of a six inch wafer at the users choice of angle and rotation speed.  The Ionfab 300+ can allow researchers to investigate thin film structures with vertical or angled side walls. The platen is water cooled to reduce sample heating.


  • 1000V ion source gun
  • Non reactive gas
  • Turbo pumped to 1*10-6
  • Water cooling of the substrate
  • Variable orientation of substrate
  • Substrate rotation
  • Semiautomatic processing available



  • Adjustable process control over a large range of beam voltages
  • High selectivity
  • Large variety of masking layers



  • Metal and Si patterning
  • Metal layer removal