Device oriented electronics deals with the question of how the physical construction, both material and geometry, of a device influence its performance in a circuit. Interested students may enter the program with a BS in engineering or other science discipline such as physics or chemistry.

A flexible curriculum featuring the theory, design, fabrication and characterization of semiconductor devices is emphasized. Electrical engineering courses in solid state devices, semiconductor device physics and analysis, materials, and design and fabrication of integrated circuits are available. Students also take courses as appropriate in thermodynamics and statistical mechanics, quantum mechanics, solid state physics, electromagnetics and mathematical methods.

Course work requirements for MS and PhD programs are given in the Graduate Handbook. Core and supporting courses include:

  • EE 4232 Solid State Devices II
  • EE 4240 Linear Circuit Design
  • EE 4250 Digital Integrated Circuits
  • EE 4260 Semiconductor Measurements
  • EE 4270 Optical Electronics
  • EE 7210 Semiconductor Device Modeling
  • EE 7220 Semiconductor Devices I: Bipolar
  • EE 7222 Semiconductor Devices II: Field Effect
  • EE 7230 Physics of Device Electronics
  • EE 7232 Physics of Small-Geometry Devices
  • EE 7240 Integrated Circuit Engineering
  • EE 7242 VLSI Systems
  • EE 7244 Advanced Lithography & Metrology
  • EE 7246 Integrated Sensors and Actuators
  • EE 7250 Semiconductor Power Devices
  • EE 7260 Semiconductor Materials
Related Courses
  • PHYS 4125-26 & 7225 Thermodynamics & Statistical Mech.
  • PHYS 4141-42 Introduction to Quantum Mechanics
  • PHYS 4261 & 7363-64 Solid State Physics
  • PHYS 4132 & 7231-32 Electromagnetics
  • PHYS 4112 Mathematical Physics
  • MATH 4038 Mathematical Methods in Engineering
  • MATH 4340 Partial Differential Equations

Currently, research is being conducted in the areas of carrier transport in nonuniform materials such as heterostructures and heavily doped silicon, thin film growth and characterization, integrated sensors and actuators, microelectromechanical systems (MEMS), VLSI design, submicron lithography and micromachining using X-rays, low temperature processing and devicemodeling. The 4000 sq. ft. Electronic Material and Device Laboratory has class 100 clean room for device processing. Facilities of the new Center for Advanced Microstructures and Devices (CAMD) are available for research to qualified students. Research funding is derived from governmental agencies, private industries and state sources.

Electronic Material and Device Laboratory

Integrated Microsystems Group

Electronics Area Faculty