Bransen Plasma Asher

photo: branson

 

 

An O2 RF plasma can be used at CAMD to strip one to five microns of resist from up to 6 four inch wafers at a time.  The Bransen Asher is run at 600W at time, temperture, or manual control.

Minor modification – The Bransen Plasma Asher reduced Nitrogen purge flow for the safe ashing of thin fragile membranes

 

Features:

  • 1500 W 13.56 MHz RF generator
  • Thermal probe
  • Automatic processing
  • Capable of processing with up to three gases (only one installed)

 

Capabilities:

  • Reactive ion etching with O2

 

Applications:

  • Resist stripping
  • Substrate cleaning Bransen Plasma Asher Manual.pdf

 

PDF documents: